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1

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Mukhopadhyay, Partha, Chowdhury, Subhra, Wowchak, Andrew, Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

2

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Wang, Liang, Adesida, Ilesanmi, Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 605 KB

english, 2008

3

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Dabiran, A. M., Wowchak, A. M., Osinsky, A., Xie, J., Hertog, B., Cui, B., Look, D. C., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 536 KB

english, 2008

4

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, Nikishin, Sergey A.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.76 MB

english, 2018

5

Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)

A.M. Dabiran, P.I. Cohen, J.E. Angelo, W.W. Gerberich

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 618 KB

english, 1993

6

Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors

Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2004

Language:

english

File:

PDF, 970 KB

english, 2004

7

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Jia, Ye, Wallace, Joshua S., Qin, Yueling, Gardella, Joseph A., Dabiran, Amir M., Singisetti, Uttam

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.31 MB

english, 2016

8

Development of enhancement mode AlN/GaN high electron mobility transistors

Chang, C. Y., Pearton, S. J., Lo, C. F., Ren, F., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 462 KB

english, 2009

9

Passivation of AlN∕GaN high electron mobility transistor using ozone treatment

Lo, C. F., Chang, C. Y., Pearton, S. J., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P., Ren, F.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 624 KB

english, 2010

10

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Pearton, S. J., Scherbatchev, K. D., Bublik, V. T.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 774 KB

english, 2008

11

Influence of [sup 60]Co Î³-rays on dc performance of AlGaN/GaN high electron mobility transistors

Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Schoenfeld, D., Baca, A. G.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 243 KB

english, 2002

12

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Mukhopadhyay, Partha, Bag, Ankush, Gomes, Umesh, Banerjee, Utsav, Ghosh, Saptarsi, Kabi, Sanjib, Chang, Edward Y. I., Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

Journal:

Journal of Electronic Materials

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

13

High-Pressure Structures and Transformations of Calcium Borohydride Probed by Combined Raman and Infrared Spectroscopies

Liu, Ang, Xie, Shuntai, Dabiran-Zohoory, Shahab, Song, Yang

Journal:

The Journal of Physical Chemistry C

Year:

2010

Language:

english

File:

PDF, 2.15 MB

english, 2010

14

Hybrid CdZnO/GaN quantum-well light emitting diodes

Mares, J. W., Falanga, M., Thompson, A. V., Osinsky, A., Xie, J. Q., Hertog, B., Dabiran, A., Chow, P. P., Karpov, S., Schoenfeld, W. V.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 707 KB

english, 2008

15

Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB[sub 2]-based Ohmic contacts

H. Wang, T. J. Anderson, B. S. Kang, F. Ren, C. Li, Z. Low, J. Lin, B. P. Gila, S. J. Pearton, A. Osinsky, A. Dabiran

Year:

2007

Language:

english

File:

PDF, 441 KB

english, 2007

16

Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Kauser, M. Z., Osinsky, A., Dabiran, A. M., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

17

W2B based High Thermal Stability Ohmic Contacts to n-GaN

Khanna, Rohit, Pearton, S J, Kao, C J, Kravchenko, I I, Ren, F, Chi, G C, Dabiran, A, Osinsky, A

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 445 KB

english, 2005

18

Are andropause symptoms related to depression?

Khosravi, Shahla, Ardebili, Hasan Eftekhar, Larijani, Bagher, Nedjat, Saharnaz, Nikbakht Nasrabadi, Alireza, Ardebili, Mehrdad Eftekhar, Dabiran, Soheila, Samizadeh, Esmaeil

Journal:

Aging Clinical and Experimental Research

Year:

2015

Language:

english

File:

PDF, 209 KB

english, 2015

19

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Xi, Yuyin, Liu, Lu, Ren, Fan, Pearton, Stephen J., Kim, Jihyun, Dabiran, Amir, Chow, Peter P.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

20

SPIE Proceedings [SPIE SPIE Astronomical Telescopes + Instrumentation - San Diego, California, USA (Sunday 27 June 2010)] Space Telescopes and Instrumentation 2010: Ultraviolet to Gamma Ray - Gallium nitride photocathodes for imaging photon counters

Siegmund, Oswald H. W., Arnaud, Monique, Murray, Stephen S., Hull, Jeffrey S., Tremsin, Anton S., Takahashi, Tadayuki, McPhate, Jason B., Dabiran, Amir M.

Year:

2010

Language:

english

File:

PDF, 7.23 MB

english, 2010

21

Are you a COVID-19 chameleon?

Dabiran, Caroline

Journal:

Year:

2020

File:

PDF, 1004 KB

2020

22

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

T.J. Anderson, H.T. Wang, B.S. Kang, F. Ren, S.J. Pearton, A. Osinsky, Amir Dabiran, P.P. Chow

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

23

Temperature dependence of pnp GaN/InGaN HBT performance

K.P. Lee, A.M. Dabiran, P.P. Chow, A. Osinsky, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 483 KB

english, 2004

24

Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

S. G. Zhang, X. W. Zhang, J. X. Wang, J. B. You, Z. G. Yin, J. J. Dong, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

25

[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs

Kuliev, A., Kumar, V., Schwindt, R., Selvanathan, D., Dabiran, A.M., Chow, P., Adesida, I.

Year:

2002

Language:

english

File:

PDF, 458 KB

english, 2002

26

Electrical and optical properties of doped p-type GaN superlattices

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Dabiran, Amir M., Osinsky, A. V., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 343 KB

english, 2006

27

Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

X. Yu, C. Li, Z.N. Low, J. Lin, T.J. Anderson, H.T. Wang, F. Ren, Y.L. Wang, C.Y. Chang, S.J. Pearton, C.H. Hsu, A. Osinsky, A. Dabiran, P. Chow, C. Balaban, J. Painter

Journal:

Sensors and Actuators B: Chemical

Year:

2008

Language:

english

File:

PDF, 1.31 MB

english, 2008

28

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Lo, Chien-Fong, Xi, Yuyin, Liu, Lu, Pearton, Stephen J., Doré, Sylvain, Hsu, Chien-Hsing, Dabiran, Amir M., Chow, Peter P., Ren, Fan

Journal:

Sensors and Actuators B: Chemical

Year:

2013

Language:

english

File:

PDF, 724 KB

english, 2013

29

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Kang, B. S., Ren, F., Kang, M. C., Lofton, C., Tan, Weihong, Pearton, S. J., Dabiran, A., Osinsky, A., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 303 KB

english, 2005

30

Happy patients + positive reviews = success

Dabiran, Caroline

Journal:

Year:

2019

File:

PDF, 611 KB

2019

31

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Zhou, Lin, Chang, C. Y., Pearton, S. J., Ren, F., Dabiran, Amir, Smith, David. J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.06 MB

english, 2010

32

Floating gate technique as a thermodynamic probe of two-dimensional electron systems

A.M. Dabiran, F.F. Fang, T.P. Smith III, P.J. Stiles

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 262 KB

english, 1990

33

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Cui, B., Xie, J., Osinsky, A. V., Chow, P. P., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 388 KB

english, 2008

34

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Novel Thermally Stable Contacts to GaN

Stafford, Luc, Khanna, Rohit, Voss, Lars, Pearton, Steve J., Ren, F., Anderson, Travis J., Dabiran, A., Osinsky, A.

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

35

Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

Hung, Sheng-Chun, Chu, Byung Hwan, Chang, Chih-Yang, Lo, Chien Fong, Chen, Ke Hung, Pearton, S. J., Dabiran, Amir, Chow, P. P., Chi, G. C., Ren, F.

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 161 KB

english, 2009

36

Neutron irradiation effects in p-GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, S. J. Pearton, A. Dabiran, A. V. Osinsky

Year:

2006

Language:

english

File:

PDF, 483 KB

english, 2006

37

Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and Tem

de Boer, M. P., Angelo, J. E., Dabiran, A. M., Cohen, P. I., Gerberich, W. W.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 2.53 MB

english, 1992

38

DC and RF Performance of AlN/GaN MOS-HEMTs

TAKING, Sanna, MACFARLANE, Douglas, Z. KHOKHAR, Ali, DABIRAN, Amir M., WASIGE, Edward

Journal:

IEICE Transactions on Electronics

Year:

2011

Language:

english

File:

PDF, 1.87 MB

english, 2011

39

Growth Rate Reduction of GaN Due to Ga Surface Accumulation

Crawford, D.E., Held, R., Johnston, A. M., Dabiran, A. M., Cohen, Philip I.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

1996

File:

PDF, 111 KB

1996

40

Fabrication of Hybrid n -ZnMgO/ n -ZnO/ p -AlGaN/ p -GaN Light-Emitting Diodes

Yang, Hyuck Soo, Han, Sang Youn, Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Ren, F., Osinsky, A., Dong, J. W., Hertog, B., Dabiran, A. M., Chow, P. P., Chernyak, L., Steiner, T., Kao, C.

Journal:

Japanese Journal of Applied Physics

Year:

2005

File:

PDF, 311 KB

2005

41

Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs

K.P. Lee, A. Dabiran, P.P. Chow, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 598 KB

english, 2003

42

Effects of base structure on performance of GaN-based heterojunction bipolar transistors

K.P Lee, F Ren, S.J Pearton, A.M Dabiran, P.P Chow

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 310 KB

english, 2003

43

Normally-on/off AlN/GaN high electron mobility transistors

C. Y. Chang, C. F. Lo, F. Ren, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, B. Cui, P. P. Chow

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 161 KB

english, 2010

44

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Year:

2010

Language:

english

File:

PDF, 541 KB

english, 2010

45

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes

Wang, Hung-Ta, Anderson, Travis, Ren, Fan, Li, Changzhi, Low, Zhen-Ning, Lin, Jenshan, Gila, Brent, Pearton, Steve, Dabiran, Amir, Osinsky, Andrei

Year:

2007

Language:

english

File:

PDF, 529 KB

english, 2007

46

Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Rohit Khanna, L. Stafford, S.J. Pearton, T.J. Anderson, F. Ren, I.I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan-Young Lee, Jihyun Kim

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 462 KB

english, 2007

47

Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode

Zhang, Sheng-Kun, Wang, Wubao, Alfano, Robert R., Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

Year:

2012

Language:

english

File:

PDF, 178 KB

english, 2012

48

Electron irradiation of AlGaNâGaN and AlNâGaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Pearton, S. J., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Kolin, N. G., Boiko, V. M., Merkurisov, D. I.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 519 KB

english, 2008

49

Sleep related quality of life before and after adenotonsillar surgery in pediatric population

Mohsen, Naraghi, Susan, Adil, Shahin, Bastaninejad, Soheila, Dabiran

Journal:

International Journal of Pediatric Otorhinolaryngology

Year:

2014

Language:

english

File:

PDF, 390 KB

english, 2014

50

Growth of Hf and HfN on GaN by molecular beam epitaxy

A. Parkhomovsky, B. E. Ishaug, A. M. Dabiran, P. I. Cohen

Year:

1999

Language:

english

File:

PDF, 522 KB

english, 1999

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